| Series | KN-1000B |
| Power supply | AC voltage | 100-240 VAC 50 to 60 Hz |
| DC voltage | 24 VDC |
| Allowable voltage range | 90 to 110% of rated voltage |
| Power consumption | AC voltage | Max. 6 VA |
| DC voltage | Max. 4 W |
| Display method | 4digit: 7Segment LED Display (red), Bar LED: 101EA (green) |
| Input type | RTD | JPt100Ω, DPt100Ω, DPt50Ω, Cu50Ω, Cu100Ω (5 types) |
| Thermocouple | K J, E, T, R, B, S, N, C (W5), L, U, PLII (12 types) |
| Analog | • Voltage: ±1.000 V, ±50.00 mV, -199.9~200.0 mV, -1.00 V~10.00 V (4 types)
• Current: 4.00~20.00 mA, 0.00~20.00 mA (2 types) |
| Digital input | • Contact input: Max. 2 kΩ in ON,Max. 90 kΩ in OFF
• Non-contact input: Residual voltage max. 1.0 V in ON, Leakage current max. 0.03 mA in OFF
• Outflow current: Approx. 0.2mA |
| Sub output | Alarm output | 2-point: Relay contact capacity 250 VAC 3 A 1c, 4-point: Relay contact capacity 250 VAC 1 A 1a |
| Transmission output | ISOLATED DC 4-20 mA(PV transmission) load resistance max. 600Ω
(accuracy: ±0.2%F.S., resolution: 8000) |
| Communication output | RS485 (Modbus RTU) |
| Display accuracy | ±0.2% F.S. ±1digit (25℃±5℃)
±0.3% F.S. ±1digit ( 10℃ to 20℃, 30℃ to 50℃)
In case of thermocouple and below -100℃ input, [ ±0.4%F.S. ] ±1digit
※ TC-T, TC-U is min. ±2.0℃ |
| Setting method | Set by front keys, or RS485 communication |
| Alarm output hysteresis | Set ON/OFF interval (1 to 999 digit) |
| Sampling cycle | Analog input: 100 ms, Temperature sensor input: 250 ms |
| Dielectric voltage | 2000 VAC 50/60 Hz for 1 min. (between input terminal and power terminal) |
| Vibration | 0.75 mm amplitude at frequency of 5 to 55 Hz (for 1 min.) in each of X, Y, Z directions for 2 hours |
| Relay life cycle | 2-point | Mechanical: Min. 10,000,000, Electrical: Min. 100,000 (250 VAC 3 A resistance load) |
| 4-point | Mechanical: Min. 20,000,000, Electrical: Min. 500,000 (250 VAC 1 A resistance load) |
| Insulation resistance | Min. 100 MΩ (at 500VDC megger) |
| Noise resistance | Square shaped noise by noise simulator (pulse width 1㎲) ±2 kV |
| Memory retention | Approx. 10 years (non-volatile semiconductor memory type) |
| Environ- ment | Ambient temperature | -10 to 50℃, storage: - 20 to 60℃ |
| Ambient humidity | 35 to 85%RH, storage: 35 to 85%RH |
| Approval | CE |
| Unit weight | Approx. 200 g |